Electronic components to create new materials

Electronic components to create new materials, it is said that "liandanlu" have nothing to do with it

      A new material has been paid more and more attention in recent years, MoS2 in instrument manufacture and application caused widespread concern. Balandin team for the first time on the potential applications of the materials in high temperature electronic equipment. A new material has been paid more and more attention in recent years, MoS2 in instrument manufacture and application caused widespread concern. Balandin team for the first time on the potential applications of the materials in high temperature electronic equipment. A new material has been paid more and more attention in recent years, MoS2 in instrument manufacture and application caused widespread concern. Balandin team for the first time on the potential applications of the materials in high temperature electronic equipment.

In the high temperature experiment, Balandin research group in a clean laboratory using standard lithographic techniques the MoS2 transistor fabricated on silicon substrate. Some transistors have only a few atomic layers of thickness (e.g., 1-3), while others have a layer of thickness (15-18). Balandin said their experiments showed that the relatively thick layer of the sheet has a more temperature stability, and show a higher carrier mobility with the increase of temperature.   

      By measuring the DC, namely in the system continued for a period of time stable loading current and voltage, the researchers study the temperature from 300 Kelvin rise to 500 Kelvin transistor current voltage characteristic curve that functional properties. "The carrier mobility and threshold voltage will decrease with the increase of temperature," Balandin said. "The decrease of the carrier mobility will lead to the decrease of the current through the component channel, and the threshold voltage will cause the increase of the current. Therefore, the specific performance of the current with the increase of temperature depends on the carrier mobility and the threshold voltage at the same time reduce the interaction of the results."

      One of the interesting phenomena observed by the researchers is that in the current voltage characteristic curve, when the temperature rises to 450 Kelvin, there is a characteristic "junction" near zero voltage ". This material "memory effect" of the characteristics of the junction in the graphite transistor and electronic glass have been similarly observed, this phenomenon indicates that the material is expected to be used to produce high temperature sensor.

      Balandin said in the practical application, under the condition of high temperature electronic circuits and sensors require MoS2 transistor at least can work continuously for as long as a month. Study group after two months once again test the performance of MoS2 transistor, found that it can still achieve a stable operation and has a higher threshold voltage, lower carrier mobility, and mobility on temperature dependence is weaker. The researchers further plan is research with industrial chemical gas phase deposition to make MOS transistors and circuits under high temperature conditions of work performance.